10th EAI International Conference on IoT as a Service
Wuhan, Hubei, ChinaCall For Papers: The 10th International Conference on IoT as a Service, sponsored by EAI Research (European Alliance for Innovation) and in collaboration with IEEE Young Professionals Montreal is being organized in Wuhan - China. Topics of interest are as follows: Scope: 1. Cellular Vehicle-to-Everything (C-V2X) 2. Industrial IoT 3. 6G & Satellite Internet 4. Marine IoT 5. Artificial Intelligence for AIoT 6. Security and Privacy for Smart IoT 7. Intelligent Sensing Technology 8. CV & NLP For complete author guideline and paper submission, please visit the conference page at: https://iotaas.eai-conferences.org/2024/submission/ Speaker(s): Qian Zhang, Shanzhi Chen Wuhan, Hubei, China
Detection of zeptojoule terahertz pulses for 6G technologies
Virtual: https://events.vtools.ieee.org/m/444952Detection of zeptojoule terahertz pulses for 6G technologies. Abstract: We review efforts made at the Ultrafast Terahertz Lab at the University of Ottawa under the supervision of Prof. Jean-Michel Ménard and Dr. Angela Gamouras (NRC) towards demonstrating a high-sensitivity room-temperature detection scheme for terahertz (THz) radiation. This approach is based on nonlinear optical frequency conversion of THz to near-infrared (NIR) frequency. The upconverted NIR photons are spectrally resolved using a monochromator and detected using a commercial single-photon detector sensitive in the NIR. We detect THz pulses with energies as low as 1.4 zJ (10-21 J) which corresponds to 1.5 photons per pulse at a frequency of 2 THz when averaged over only 50,000 pulses. The development of such high-sensitivity detection schemes will pave the way towards room-temperature THz single-photon detection, THz quantum technologies and wireless communications. We explore the THz band as a possible solution to meet the ever-growing demand of high data transfer rates for sixth and next generation (6G) wireless communications. At these frequencies, one of the disadvantages is strong absorption due to water vapour. However, we have identified seven bands with high spectral transmission between 1 THz and 3 THz under normal atmospheric conditions. We classify these bands into three categories based on the THz propagation distance for different applications: 1. Short, 2. Mid and 3. Long-range communications. ------------------------------------------------------------------------ Détection d'impulsions térahertz zeptojoules pour les technologies 6G. Résumé : Nous passons en revue les efforts déployés au laboratoire Ultrafast Terahertz de l'Université d'Ottawa sous la supervision du professeur Jean-Michel Ménard et de la Dre Angela Gamouras (CNRC) pour démontrer un système de détection à haute sensibilité à température ambiante pour le térahertz (THz). Cette approche est basée sur la conversion de fréquence optique non linéaire du THz en fréquence proche infrarouge (NIR). Les photons NIR convertis sont résolus spectralement à l'aide d'un monochromateur et détectés à l'aide d'un détecteur commercial à photon unique sensible dans le NIR. Nous détectons des impulsions THz avec des énergies aussi faibles que 1,4zJ (10-21 J), ce qui correspond à 1,5 photons par impulsion à une fréquence de 2 THz en moyenne sur seulement 50 000 impulsions. Le développement de tels systèmes de détection à haute sensibilité ouvrira la voie à la détection de photons uniques THz à température ambiante, aux technologies quantiques THz et aux communications sans fil. Nous explorons la bande THz comme solution possible pour répondre à la demande toujours croissante de débits de transfert de données élevés pour les communications sans fil de sixième et prochaine génération (6G). A ces fréquences, un des inconvénients est la forte absorption due à la vapeur d'eau. Cependant, nous avons identifié sept bandes à transmission spectrale élevée entre 1 THz et 3 THz dans des conditions atmosphériques normales. Nous classons ces bandes en trois catégories en fonction de la distance de propagation THz pour différentes applications : 1. Communications courtes, 2. Moyennes et 3. Communications longue portée. Eeswar Kumar Yalavarthi Aswin Vishnu Radhan About / A propos The High Throughput and Secure Networks (HTSN) Challenge program is hosting regular virtual seminar series to promote scientific information sharing, discussions, and interactions between researchers. https://nrc.canada.ca/en/research-development/research-collaboration/programs/high-throughput-secure-networks-challenge-program Le programme Réseaux Sécurisés à Haut Débit (RSHD) organise régulièrement des séries de séminaires virtuels pour promouvoir le partage d’informations scientifiques, les discussions et les interactions entre chercheurs. https://nrc.canada.ca/fr/recherche-developpement/recherche-collaboration/programmes/programme-defi-reseaux-securises-haut-debit Co-sponsored by: National Research Council, Canada. Optonique. Speaker(s): Eeswar Kumar Yalavarthi, Aswin Vishnu Radhan Virtual: https://events.vtools.ieee.org/m/444952
The 8th Montreal Photonics Networking Event
Room: Atrium Lorne-M.-Trottier, Bldg: Pavillon Lassonde, 3e étage, 2700, Chemin de la Tour, Montréal, Quebec, Canada, H3T 1J4You are invited to attend the 8th Montreal Photonics Networking Event on Friday 29th November 2024. The Montreal Photonics Networking Event is an annual event that brings together students doing research in photonics, as well as the local industry and innovation ecosystem. The event features a poster competition with several prizes and various networking activities to foster professional development. The event’s mission is to bring together graduate students to (1) establish a way for students to discuss life as a photonics researcher, (2) enhance research synergies, and (3) connect with the industry for further career development. ----------------- Vous êtes invité·e·s à participer au 8e événement de réseautage en photonique de Montréal le vendredi 29 novembre 2024. Le Montreal Photonics Networking Event est un événement annuel qui rassemble les étudiant·e·s qui font de la recherche en photonique, ainsi que l'industrie locale et l'écosystème de l'innovation. L'événement comprend un concours d'affiches doté de plusieurs prix et diverses activités de réseautage visant à favoriser le développement professionnel. La mission de l'événement est de rassembler les étudiant·e·s (1) permettre aux étudiant.e.s d'échange sur la vie de chercheur·e en photonique, (2) améliorer les synergies de recherche, et (3) rencontrer des représentant·e·s de l'industrie pour développer de nouvelles perspectives de carrière Co-sponsored by: ETS. STARACOM. INTRIQ. PRIMA. Fonex. PreFab. Numana. Ansys. Femtum. Optech. Aeponyx. Excelitas Technologies. Agenda: - 10:00 AM - 10:30 AM: Booth & poster set-up - 10:30 AM - 11:00 AM: Registration general attendees - 11:00 AM - 12:00 PM: Poster session #1 dedicated to Dr. Andrea Rovere - 12:00 PM - 1:00 PM: Networking & lunch - 1:00 PM - 1:10 PM: Welcome by Chair in conference room : M1010 - Pavillon Lassonde - 1:10 PM - 2:00 PM: Plenary speaker in conference room : M1010 - Pavillon Lassonde - 2:00 PM - 3:00 PM: Student Speed-networking - 3:00 PM - 4:00 PM: Poster session #2 - 4:00 PM - 4:45 PM: Free networking - 4:45 PM - 5:00 PM: Announcement of presentation competition winners and closing speech - 5:00 PM - 6:00 PM: Social networking Room: Atrium Lorne-M.-Trottier, Bldg: Pavillon Lassonde, 3e étage, 2700, Chemin de la Tour, Montréal, Quebec, Canada, H3T 1J4
From Intelligent Surfaces to Noise-Driven Communication: Innovative Technologies for 6G and Beyond
Virtual: https://events.vtools.ieee.org/m/443554From Intelligent Surfaces to Noise-Driven Communication: Innovative Technologies for 6G and Beyond Prof. Ertuğrul Başar Koç University, Turkey – [email protected] When: November 29th 2024, 11H00 AM Quebec-Canada Local Time Where: ONLINE VIA ZOOM: https://uqtr.zoom.us/j/81521084215?pwd=bchQDndZg7DTlpVuaeag6bhGwaOvn9.1 Meeting ID : 815 2108 4215 Password : 018477 Abstract - Our community has witnessed the rise of many exciting communication technologies in recent years. Notable examples include alternative waveforms, massive multiple-input multiple-output signaling, non-orthogonal multiple access, joint communications and sensing, AI-empowered systems, and so on. In this context, 6G wireless networks will inevitably require a rethinking of wireless communication systems and technologies, particularly at the physical layer, since the cellular industry reached another critical milestone with the development of 5G wireless networks with diverse applications. Within this perspective, first, this talk aims to shed light on the most recent developments in reconfigurable intelligent surface (RIS)-empowered communication towards 6G and beyond wireless networks by discussing promising candidates for future research and development. Specifically, we emphasize different RIS architectures and emerging RIS use cases. Second, taking RIS-based radio frequency chain-free transmitters one step further, we put forward the paradigm of noise-driven communication. We discuss the potential of noise-driven communication systems for three purposes: low/zero-signal-power transmission by indexing resistors or other noise sources according to information bits, noise-alike waveform/modulation design for improved communication efficiency, and unconditionally secure key generation using noise-based loops. Biography - [] Prof. Ertuğrul Başar received his Ph.D. degree from Istanbul Technical University in 2013. He is a Professor at the Department of Electrical and Electronics Engineering, Koç University, Istanbul, Turkey, and the director of the Communications Research and Innovation Laboratory (CoreLab). He had visiting positions at Ruhr University Bochum, Germany (2022, Mercator Fellow) and Princeton University, USA (2011-2012, Visiting Research Collaborator). His primary research interests include 6G and beyond wireless networks, communication theory and systems, reconfigurable intelligent surfaces, software-defined radio implementations, waveform design, physical layer security, and deep learning and signal processing for communications. In the past, Dr. Başar served as an Editor/Senior Editor for many journals, including IEEE Communications Letters (2016-2022), IEEE Transactions on Communications (2018-2022), Physical Communication (2017-2020), and IEEE Access (2016-2018). Currently, he is an Editor of Frontiers in Communications and Networks. He is the author/co-author of more than 170 international journal publications and 16 patents that received around 15K citations. He also supervised 5 PhD and 18 master’s students. He is an Associate Member of the Turkish Academy of Sciences (TÜBA). In recognition of his outstanding contributions to physical-layer design for next-generation wireless networks, Prof. Basar was elevated to IEEE Fellow in 2023, becoming one of the youngest IEEE Fellows of Turkey at the age of 37. He is also a Fellow of the Asia-Pacific Artificial Intelligence Association (AAIA) and the Artificial Intelligence Industry Academy (AIIA). Recently, Dr. Basar has been selected as an IEEE ComSoc Distinguished Lecturer for the Class of 2024-2025. Speaker(s): Prof. Başar, Virtual: https://events.vtools.ieee.org/m/443554
Evaluating the High Voltage and High Frequency Capability of Future GaN-Based Diodes, MOSFETs, and Novel Photoconductive Switches
Room: EV3.309, Bldg: Engineering Building, Concordia University, 1515 St. Catherine W, Montreal, Quebec, Canada, H3G1M8Wide bandgap semiconductor devices based on gallium nitride (GaN) offer myriads of advantages over traditional silicon (Si)-based devices for applications in power electronics. These advantages include higher voltage-handling capability with associated low conduction loss, as well as faster switching capabilities, allowing for reduced filtering components within converter topologies, thus leading to improved power density. Despite the many advantages of GaN devices, several challenges related to technological readiness level (TRL) and practical implementation have hindered their widespread adoption, particularly at high voltage. For these reasons, advanced characterization methods for GaN semiconductors are needed, so that these devices can realize their full performance entitlement. This talk will present a broad array of new characterization and modeling methodologies for future GaN diodes, MOSFETs, and novel Photoconductive Semiconductor Switches (PCSS). The presented work will include device physics simulations using finite element modeling techniques, which facilitate the design of new architectures of vertical GaN diodes that are capable of withstanding high voltages. Relative to conventional bevel-angle diodes, the proposed “hybrid edge termination” structure is much simpler, yet produces similar breakdown characteristics. It will be shown that the simulated designs can be used to fabricate and empirically characterize the static and dynamic performance of the 1.2 kV diodes. The empirically validated diode simulations inform and guide the design of high voltage GaN MOSFETs, leading to the development of scaling rules which can reasonably project the performance of future GaN devices up to 20 kV. To address potential forthcoming challenges related to Electromagnetic Interference (EMI), a novel GaN-based PCSS device is proposed and characterized. PCSS devices are optically triggered, thereby electrically decoupling the input and output ports of the device, allowing for EMI mitigation. A new “Cascaded Double Pulse Test” (C-DPT) is used to empirically characterize the dynamic performance of the PCSS device. The C-DPT consists of a low-voltage DPT, strategically positioned overtop of a high-voltage DPT. The low voltage DPT drives a UV LED, acting as the freewheeling diode to provide optical triggering to the PCSS device, which is implemented on the high-voltage DPT. This novel proof-of-concept circuit can inform the design of next-generation power converters utilizing PCSS devices. Finally, the dispersive effect of the parasitic components contained in high-frequency GaN-based circuits is evaluated. As the spectral content in GaN-based circuits is infringing on frequencies previously only observed in the RF domain, new characterization and modeling techniques are needed. This talk will demonstrate that the extended spectral content, orders of magnitude above the switching frequency, associated with GaN-based converters is causing the parasitic components of the circuit to exhibit frequency-dependence. Strategies to account for, and predict this behavior will be presented. The talk will conclude with applying learned lessons from wide bandgap semiconductors to develop a roadmap towards the design of ultra-wide bandgap devices, such as gallium oxide, or aluminum nitride. Speaker(s): Raghav Khanna, Room: EV3.309, Bldg: Engineering Building, Concordia University, 1515 St. Catherine W, Montreal, Quebec, Canada, H3G1M8
Quantitative Analysis of Machine Learning Model Performance and the need to consider explainability in it
Virtual: https://events.vtools.ieee.org/m/442073[] Free Registration (with a Zoom account; you can get one for free if you don't already have it): https://sjsu.zoom.us/meeting/register/tZcsc-CoqjwpG9aPDHfg6Axqvn90i4uQRmqr Synopsis: For a long time, the AI/ML community relied on traditional evaluation metrics such as the confusion matrix, accuracy, precision, and recall for assessing the performance of machine learning models. However, the rapidly evolving field has been raising several ethical concerns, which calls for a more comprehensive evaluation scheme. In easy-to-understand language, this talk will delve into the quantitative analysis of model performance, emphasizing the critical importance of explainability. As ML models become increasingly complex and pervasive, understanding their decision-making processes is paramount. We'll explore various performance metrics, their limitations, and the growing need for transparency. Topics covered include Cohen’s Kappa Statistic, Matthew's correlation coefficient (MCC), Confusion Matrix, Precision, Recall, G-measure, ROC Curve, Youden's J statistic, Type II Adversarial attack, R-squared, LIME, SHAP, and more. Speaker(s): Dr. Vishnu S. Pendyala Virtual: https://events.vtools.ieee.org/m/442073